d****i
发帖数: 1038 | 1 sure you can. but don't ask me how. I was an OPNET modeler user.
only know a little of ns2. but I know it can.
you have to add/modify some code in ns2 to calculate/simulate whatever you
want to do. It will be easier and more trustworthy than you write from
scratch.
usage, |
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h**********l
发帖数: 6342 | 2 ns2你自己写代码，想干啥就干啥
而且，知道的人多。你自己写个simulator，发文章，人家还会问你为啥不用ns2哪
usage, |
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x*****9
发帖数: 3 | 3 在switch cap ckt simulation中需要得出电压和温度的曲线。目前只知道要对温度run
parametic analysis, 同时在analog artist 对所需电压run transient analysis，
可是这样子如何才能得到电压对温度的曲线呢？急等！谢谢！ |
|
M*****t
发帖数: 120 | 4 Is there any good software package for Monte Carlo Simulation? |
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a*m
发帖数: 6253 | 5 BTW, what version of AMS simulator you are using?
The new one should fix a lot of bugs like this.
Of coz, it creates a lot of new bugs as well, :-) |
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a******e
发帖数: 80 | 6 My ADE invoked ncsim 06.11-s002 for simulation.What did you use?
We contacted cadence regarding the problem and were told to surpress the
warning message.So the warning messages become invisible. But it is not a
solution, is it? |
|
w*****r
发帖数: 348 | 7 Does anyone know how to do gate-level simulation using ncverilog? Say I have
a synthesized gate-level netlist, and I have library file .db & .lib. A
script will be appreciated, thanks in advance. |
|
s*****y
发帖数: 1974 | 8 you need a simulation software
import netlist, should be fine
have |
|
w*****r
发帖数: 348 | 9 Thanks a lot. Since I want to measure the power at gate-level, I have to do
gate-level simulation.
Meanwhile, can you give more detail about the .sdf file? I am using DC to
synthesis. Is there any script you can provide? |
|
a******e
发帖数: 331 | 10 To get power, after Gate level simulation, get .VCD file, read into
primepower and report peak and average power. But you can also get average
power if you have switching activity information for the design and the
software will propagate for you.
If you are using <130nm process, DC netlist/SDF is not good enough and
should use P&R netlist and SDF because of the interconnect effects. To write
out SDF from DC, I suggest you use GUI mode in design_vision if you are not
so familiar with TCL.
do |
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a******e
发帖数: 331 | 11 SDF is standard delay format. All the cell/interconnect delays went into
this file for your synthesis or P&R netlist. Without SDF, your switching
will at the clock edge and the peak power will not be accurate(much bigger).
The VCD file got from gate level simulation so far is the most accurate way
. The problem is VCD files are related to dynamic vectors you input and
normally is very big for design>10M gates.
power
I |
|
g*g
发帖数: 6908 | 12 sdf是和netlist一起，你用这俩来运行仿真，得到比较准确的vcd或者saif
没有sdf，只用netlist,你的gate-level simulation都未必能通过吧，你用zero dealy
还是unit delay？就算通过了toggle information也不准确
is
What |
|
w*****r
发帖数: 348 | 13 我用的是zero delay. gate-level simulation里用netlist + lib.v，lib.v里面有
cell的delay信息，但是没有wire，是不是这是你说不准确的原因？
dealy |
|
s******a
发帖数: 184 | 14 在 matlab 里如何simulate 符合下面这样的hierarchical distribution 的data:
X|P ~ binomial(P)
P ~ beta(\alpha, \beta) |
|
a******e
发帖数: 80 | 15 We designed a mixed-signal ASIC and wants to find the hottest spot on the
chip so we could place a on-chip temp sensor next to it to monitor the peak
temp.
But how do we know which part of the ASIC is the hottest? Does CADENCE
simulate this? Is it gonna near the supply pad where the highest current
comes from the highest voltage or the digital section in which lots of
counting takes place?
Thanks. |
|
s***7
发帖数: 1644 | 16 I don't think it should be near the supply pad since the voltage drop on it
is negligible thus drawing very small power. What you need to do is to
estimate the power of each block and place the sensor where the most power
is drawn.
In terms cadence, I'm not aware of any tool that simulates the on chip
temperature. |
|
b********k
发帖数: 427 | 17 我最近在学用HSPICE做tran仿真，希望HSPICE能在指定的时间t暂停，在我修改下一时刻
的电流源之后，再继续运行HSPICE。
我看了一下HSPICE中的alter命令，好像是要结束上一个仿真，然后换成新参数开始下一
个仿真，所以不太适用。
想问一下新版的HSPICE和HSIM中的transient simulation，有没有stop和resume之类的
命令？
欢迎回答或者讨论，非常感谢！ |
|
s******u
发帖数: 142 | 18 What kind of topology you use in the divider? and what's the division ratio?
If the ratio is big, like 32, or 16, it'll be difficult to get the pss
converged. If division ratio is small, like 4, or 8, you can directly
simulate it like an oscillator.
and what's the spec for the Phase noise in your divider? |
|
C*****y
发帖数: 203 | 19 Great. I am working on the /2 and /4 circuit. Someone was telling me that I
can not simulate the phase noise of the divider as the same way I do for VCO
because it is a driven circuit. That is the reason I am asking.
请大牛指教
ratio? |
|
w******r
发帖数: 25 | 20 Is there any simulation package that will give measured voltages, currents,
powers in a smart grid system with some generators and loads?
I am looking for something that can generate the waveforms for a linear
state space model which I use to describe the smart grid system.
Thank you very much! |
|
z******i
发帖数: 59 | 21 Any good open source/free mixed circuit/ASIC simulator to recommend?
Thanks, |
|
p***e
发帖数: 472 | 22 what type of simulation platform do you need? |
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r**r
发帖数: 461 | 23 做RF circuit design and system simulations, 比如说 S parameter analysis, PA
和LNA design， 包括RFIC design, 哪个tool更好一点？更容易掌握？library差别大
吗？和NA, SA等仪器的输出输入方便程度？
以前一直用ADS， 觉得很好用。现在要我们评估ANSYS,.我根本没用过。麻烦有经验的
朋友讲讲。
多谢！ |
|
b******l
发帖数: 4 | 24 I am simulating the Fermi level pinning due to the interface traps. My device
structure is 10 A oxide on a n-type semiconductor. When I introduce the
interface between the oxide and semiconductor, I can see the band bending due
to the traps.
Now I want to put a contact on top of the oxide, and to expect that the
Schottky barrier height is not dependent on the work function of the metal and
the electron affinity, but the trap level below the conduction band. But
DESSIS does not recognize the inte |
|
y**e
发帖数: 105 | 25 美国industrial engineering里面的simulation比较好的学校是哪几所？谁能给几个？
谢了！ |
|
x*****9
发帖数: 3 | 26 我要测量switch cap ckt simulation该电路的输出电压与温度的关系，该输出电压是
数字电压。可是，对于switch cap电路，不可以run dc，因为对于这种电路，dc是开路
的，所
以，得不出任何有用的信息。就我所知，对于这种电路，只能run transient，而且为
了得到不同的温度下的值，可以run temp parametic analysis。可是，这种情况下画
出的图是一组不同温度下的Vout和time的关系，而不是我希望的Vout和Temp的关系。
急盼回复，谢谢！ |
|
w********r
发帖数: 14958 | 27 【 以下文字转载自 Physics 讨论区 】
发信人: withourcar (注意不是老ｉｄ＂没有车＂), 信区: Physics
标 题: 需要做rigid body simulation, 请支招
发信站: BBS 未名空间站 (Mon Oct 14 13:18:24 2013, 美东)
就是多个body, 之间有一些constrains, 比如joint, ball joint, friction等等。
请问，这方面流行算法有哪些？ 先谢了。 |
|
a***n
发帖数: 578 | 28 This one should be ok.
Kinetic Monte Carlo simulation of chemical vapor deposition
Battaile CC, Srolovitz DJ
ANNUAL REVIEW OF MATERIALS RESEARCH
32: 297-319 2002
there are various kinetic monte carlo method, but the principle are same. The
problem you want to solve determine the method you are going to use.
Carlo |
|
a****a
发帖数: 24 | 29 【 以下文字转载自 Chemistry 讨论区 】
发信人: anjuta (不会游泳的鱼), 信区: Chemistry
标 题: food simulant
发信站: BBS 未名空间站 (Tue Jul 12 18:25:13 2011, 美东)
不知道这里有没有人了解这个东西 （食物模拟物）， 可以赐教一下吗 |
|
h**m
发帖数: 1 | 30 Do anyone have ever done the research about
using molecular dynamics to
simulate the process of nanometric cutting?? |
|
i*****e
发帖数: 633 | 31 实验里发现一个有趣的现象，就是两层thin film长在一起，如果upper thinfilm上开
一些10 x 10 um的方形窗口阵列（就是窗口里上膜被etched了，下膜被露出），经过简
单的热处理，上膜的某些特定的地方会穿孔，自己形成一些纳米的小洞，排成一套新的
小孔阵列。
我认为两层膜之间有strain，上膜的窗口阵列造成了这个strain形成了pattern，导致
strain集中在特定的地方，从而那些地方格外脆弱，很容易被热处理剥蚀掉。
这里有人会做strain simulation吗？如果感兴趣这个topic，可以留言或者站内联系吗
？谢谢。 |
|
j***n
发帖数: 1471 | 32 拿流体力学来说吧，流体的流动是客观存在的物理现象，传统的N-S方程是对这个物理
现象的数学描述，加上有限体积法这样的数值方法配合适当的边界条件，就是对流体机
械运动规律的一个建模，也就是numerical modeling。你提出一个新的湍流模型，那就
是一个新的numerical model。搞CFD的人设置各种各样的边界条件去模拟各种流体的运
动，这个是numerical simulation. |
|
f******a
发帖数: 1 | 33 求review~~~metal/plastic welding/bonding, micromanufacturing, metal matrix
composites, simulation, carbon nanotube etc
站内联系
先谢过了！！ |
|
b****r
发帖数: 2555 | 34 工作关系，要搞点thermal simulation (flowther)和结构分析（ansys)。
大学的时候学过一点机械力学，工程力学之类的玩意，会用ProE画画。如果要短平快的
搞搞上面说的那些东西，有什么书可以推荐看看快速入门一下？ |
|
w********r
发帖数: 14958 | 35 【 以下文字转载自 Physics 讨论区 】
发信人: withourcar (注意不是老ｉｄ＂没有车＂), 信区: Physics
标 题: 需要做rigid body simulation, 请支招
发信站: BBS 未名空间站 (Mon Oct 14 13:18:24 2013, 美东)
就是多个body, 之间有一些constrains, 比如joint, ball joint, friction等等。
请问，这方面流行算法有哪些？ 先谢了。 |
|
w********r
发帖数: 14958 | 36 我要知道box路径关于时间的函数， 就不用算了。 求得就是它。
simulation嘛， 就是不知道下一时刻各个部件什么状态。 求各个状态。 |
|
s*******s
发帖数: 133 | 37 有人能推荐一下做关于tissue FEA simulation 的公司么？因为工作的原因想找个这种
公司做个项目。 多谢！
★ 发自iPhone App: ChineseWeb 8.6 |
|
p******6
发帖数: 410 | 38 Some of them are integrated into the simulation software, some of them are
not. The 41 cases may be the non-integrated ones, check out the software and
it will show more. (Or you can check them the other way around, the rest
may be in the non-software part,read their instruction carefully after you
subscribed it). |
|
T*********r
发帖数: 11175 | 39 哦
你们估计比较熟悉了
这事起因就是一个已经quit highenergy的人
听一个做astro simulation的人讲的 |
|
B*********h
发帖数: 800 | 40 ☆─────────────────────────────────────☆
catclothes (cat) 于 (Sun Mar 18 23:33:41 2007) 提到:
没有任何business, quant, finance .. 背景。做电磁场，声波modeling and
simulation 的， 工作到现在都找不到， 听说quant 的要， 在monster 上看到都要有
工作经验的， 大侠给指个明路啊，那些公司要entry level 的？ 多谢， 多谢！！
☆─────────────────────────────────────☆
lhict (至少还有我) 于 (Mon Mar 19 03:04:06 2007) 提到:
you can check dice.com, careerbuilder.com,
as well as www.wilmott.com
good luck.
☆─────────────────────────────────────☆
wusuowei (wuxuowei) 于 (Mon Mar 19 |
|
z****n
发帖数: 17 | 41 I need to simulate a Garch model of any parameter settings and then use
Rmetric GarchFit to estimate the parameteres( such as beta and alpha).
here's how i did it.
e_0=0.5
e_t= sigma_t * z_t , where z_t ~ Norm(0,1) iid
sigma_t ^2 = a_0 + a_1 * e_(t_1) ^2 + b_1 * sigma_(t_1) ^2.
I set a_0 = 0.2 a_1 = 0.4 b_1 = 0.4.
However, the Garchfit can't get the parameters right.
Does anyone know what's wrong with my garch model? thanks |
|
b***k
发帖数: 2673 | 42 ☆─────────────────────────────────────☆
sbtim (15#) 于 (Wed Sep 5 10:41:11 2007) 提到:
因为一个有限的采样数据中存在outlier，
为了得到更为可靠的distribution的location, scale估计值，
想采用bootstrap方法，
只是不确定这样产生的simulation samples, 会
不会使得估计出的statistics (mean, median, variation, quantiles)
与初始sample得到的statistics估计值有很大偏差？
请大家不吝赐教。
多谢了先。
☆─────────────────────────────────────☆
arnaud (Prrrrrf) 于 (Wed Sep 5 11:18:51 2007) 提到:
bootstrap方法要在现有样本基础上重新抽样，这个resampling过程有很多研究，根据数
据特征，可以分别采用传统bootstrap（iid）,moving blocks boot(depe |
|
c****y
发帖数: 3592 | 43 比如我给个mean,stdev,skewness,kurtosis.能simulate出来么?
顺便问一下,那个johnrand是什么用?
谢谢! |
|
j****r
发帖数: 286 | 44 you may need more info to define a random variate
suggest you google 'johnson's translation'
比如我给个mean,stdev,skewness,kurtosis.能simulate出来么?
顺便问一下,那个johnrand是什么用?
谢谢! |
|
l**********t
发帖数: 5754 | 45 can any expert recommend an open-source C/C++ library for monte carlo
simulation (with support for most of the common distributions) & descriptive
stats?
thanks. |
|
l**********t
发帖数: 5754 | 46 How do simulate a random variable X (normal distriution) and a random
variable Y (Poisson distribution), if X and Y are correlated? Y has to be
integer.
thanks. |
|
s******t
发帖数: 1956 | 47 In general, X and Y can be simulated using exponential distribution plus
rejection method. Can you give more details? How do X and Y correlate each
other? |
|
M*********t
发帖数: 257 | 48 Hello All,
I am interested in doing a MC simulation of 3 month libor and
Euro dollar exchange rate process jointly. Can anyone give suggestion
on how to get started.
Thanks a lot |
|
Q***5
发帖数: 994 | 49 Why bother with such a discrete simulation? You can simply get it more
accurately and efficiently by the following :
The pdf of the first jump is \lambda e^{-\lambda t}, to sample the first
jump, you only need to solve cdf = U, where U is uniformly sampled from [0,
1].
which leads to
t = -\frac{ln(1-U)}{\lambda},
Repeat this process of the second, third,... jumps. |
|
h*******d
发帖数: 272 | 50 真诚求书 中文版的 ROSS
中文翻译一般是 《统计模拟》 罗斯
纸版的 电子版的都行
谢谢大家 |
|
