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Job Description: RF IC Design Engineering Intern
Job Posting : Feb 4, 2011
Primary Location : US-AZ-Tempe (AZ34)
Job : Intern (technical)
Qualifications:
* Candidate will need to hold a minimum of a MS.
* Direct experience in designing high-power RF transistor internal-
matching networks using LDMOS or GaAs HFET technologies.
* The applicant must have a strong background on Microwave and RF
engineering, emphasis on one or several of the following areas is highly
desirable:
o Hands-on experience with board level tuning and optimization of
matching networks
o Experience designing with power amplifier, circuit linearization
and high-efficiency design techniques.
o Understanding and development of advanced RF/microwave
measurement techniques
* Working knowledge with Agilent's Advanced Design System (ADS) , Ansoft
's High Frequency Structure Simulator (HFSS) and planar electromagnetic
solvers (Sonnet's Em and/or Agilent's Momentum).
* Solid understanding concerning circuit instability and strategies to
resolve them.
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