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发帖数: 4 | 1 I am simulating the Fermi level pinning due to the interface traps. My device
structure is 10 A oxide on a n-type semiconductor. When I introduce the
interface between the oxide and semiconductor, I can see the band bending due
to the traps.
Now I want to put a contact on top of the oxide, and to expect that the
Schottky barrier height is not dependent on the work function of the metal and
the electron affinity, but the trap level below the conduction band. But
DESSIS does not recognize the inte |
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