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发帖数: 72 | 1 For Mott-Wannier excitons in bulk material, the binding distance is around 10
nm, and you can compute the energy like the hydrogenic system. For III-V
semiconductor family, the binding energy is around 1-10 meV, GaAs for example,
the binding energy is 4.4 meV. For II-VI semiconductors, the binding energy is
around 10-40 meV, such as for ZnSe, 21 meV. In quantum wells, the binding
energy of the excitons should be 2-3 times larger.
You could use absorption experiment to measure the exciton peaks. |
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